影像科学与光化学2013，Vol.31Issue(2)：150-156,7.DOI:10.7517/j.issn.1674-0475.2013.02.008
SnS薄膜的两步法制备及其光电性能研究
Research on the Optoelectronic Properties of SnS Thin Films Prepared by Two-Stage Process
摘要
Abstract
SnS thin films were prepared by two-stage process. Sn precursor layers were deposited on glass substrates by sputtering and followed by sulfurization of the metallic tin precursor layers at 220 ℃ in a furnace for 60 min. The characterization results of microstructures, composition and optical and electrical properties show that the SnS film presents p-type conductivity and has a (040) preferred grain orientation; SnS film has an orthorhombic structure, and the surface is uniform and density with the ratio of Sn to S close to 1. It is found that the film shows a high optical absorption coefficient of 5 ×104 cm-1 and persistent photoconductivity effect. It has a direct energy band gap of 1. 23 eV. The prepared SnS film is useful as an absorption layer of solar cells and for fabrication of photo-sensitive device.关键词
SnS薄膜/两步法/太阳能电池/光电性能Key words
SnS films/ two-stage process/ solar cell/ photoelectric properties分类
能源科技引用本文复制引用
吉强,沈鸿烈,江丰,王威,曾友宏..SnS薄膜的两步法制备及其光电性能研究[J].影像科学与光化学,2013,31(2):150-156,7.基金项目
国家自然科学基金资助项目(61176062) （61176062）
2011年大学生创新训练计划项目(国家级201210287048) （国家级201210287048）
江苏高校优势学科建设工程资助项目. （）
