强激光与粒子束2013，Vol.25Issue(5)：1200-1204,5.DOI:10.3788/HPLPB20132505.1200
CMOS反相器内部瞬态闩锁效应的脉冲宽度效应理论模型
Theoretical modeling of effect of pulse width on microwave pulse triggered internal transient latch-up in CMOS inverters
摘要
Abstract
Based on the basic principle of semiconductor physics, an analytical theoretical model was proposed to show the relationship between the microwave pulse power threshold triggering the internal transient latch-up in the CMOS inverter and pulse width quantitatively by solving the continuity equations for minority carriers. By comparing the proposed theoretical model with simulated results and experimental data reported in literatures, the correctness of the theoretical model was verified. Furthermore, the model suggests that the power threshold triggering the internal transient latch-up in the CMOS inverter is a decreasing function of pulse width as the pulse width is short. However, there is an inflexion range and the power threshold varies little when the pulse width exceeds the inflexion range.关键词
微波脉冲/CMOS反相器/闩锁效应/脉冲宽度Key words
microwave pulse/CMOS inverter/latch-up effect/pulse width分类
信息技术与安全科学引用本文复制引用
陈杰,杜正伟..CMOS反相器内部瞬态闩锁效应的脉冲宽度效应理论模型[J].强激光与粒子束,2013,25(5):1200-1204,5.基金项目
国家高技术发展计划项目 （）
