物理学报2013，Vol.62Issue(2)：502-506,5.DOI:10.7498/aps.62.026801
(Al0.1Ga0.9)0.5In0.5P材料的MOCVD生长温度窗口研究
Temperature window of the (Al0.1Ga0.9)0.5In0.5P growth by MOCVD
摘要
Abstract
The (Al0.1Ga0.9)0.5In0.5P, four-element alloy, whose band is direct, is used to make optoelectronic devices. The wavelength of the material is about 630nm. When it is epitaxially grown by low press-metalorganic chemical vapor deposition(LP-MOCVD), its quality will depend on temperature, one of the most important conditions. So it is essential to find out the best temperature of growth. The quantum wells of the (Al0.1Ga0.9)0.5In0.5P are grown at 700 ℃, 680 ℃, 670 ℃ and 660 ℃ respectively. The best temperature, which is found out by the results of photoluminescence PL, is about 670 ℃. The reasons are given by the results of PL, surfaces of wafers and the flow field simulation of MOCVD. The revaporization of In at high temperature and the incorporation of 0 at low temperature can lead to bad quality. An available path to solve growth at high temperature is to increase the effective density of In.关键词
AlGaInP/温度/MOCVDKey words
AlGalnP/ temperature/ MOCVD引用本文复制引用
孙沛,李建军,邓军,韩军,马凌云,刘涛..(Al0.1Ga0.9)0.5In0.5P材料的MOCVD生长温度窗口研究[J].物理学报,2013,62(2):502-506,5.基金项目
北京市教委项目(批准号:PXM2011_014204_09_000065)资助的课题. （批准号:PXM2011_014204_09_000065）
