量子电子学报2013，Vol.30Issue(2)：236-242,7.DOI:10.3969/j.issn.1007-5461.2013.02.018
GaInAsP/InP阶梯量子阱中氢施主杂质束缚能
Binding energy of hydrogenic donor impurity in GaInAsP/InP stepped quantum well
摘要
Abstract
Within the framework of effective mass approximation, the binding energy of a hydrogenic donor impurity in GaxIn1-xAsyP1-y stepped quantum wells (SQWs) is theoretically calculated using the vari-ational method. The influence of applied electric fields and SQWs height on hydrogenic donor impurity electronic state is investigated. The results show that the hydrogen impurity binding energy reaches its maximum when the donor impurity is located at the center of the stepped quantum wells. The applied electric fields drive the electron wave function away from the stepped quantum well center, and induce asymmetric distribution of the donor binding energy in the SQWs. The variation of Ga and As content leads to the corresponding changes in the stepped quantum well height, which significantly affects the binding energy of hydrogenic impurities in the stepped quantum wells. The results are meaningful and can be applied in the design of optoelectronic devices based on stepped quantum wells.关键词
光电子学/束缚能/变分法/氢施主杂质/阶梯量子阱Key words
optoelectronics/ binding energy/ variational method/ hydrogenic donor impurity/ stepped quantum well分类
数理科学引用本文复制引用
尹新,王海龙,龚谦,封松林..GaInAsP/InP阶梯量子阱中氢施主杂质束缚能[J].量子电子学报,2013,30(2):236-242,7.基金项目
国家自然科学基金(60976015),山东省自然科学基金(ZR2010FM023)以及信息功能材料国家重点实验开放课题资助 （60976015）
