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Effects of interaction between defects on the uniformity of doping HfO2-based RRAM: a first principle study

Zhao Qiang Zhou Maoxiu Zhang Wei Liu Qi Li Xiaofeng Liu Ming Dai Yuehua

半导体学报（英文版）2013，Vol.34Issue(3)：1-6,6.

半导体学报（英文版）2013，Vol.34Issue(3)：1-6,6.DOI:10.1088/1674-4926/34/3/032001

Effects of interaction between defects on the uniformity of doping HfO2-based RRAM: a first principle study

Zhao Qiang ¹Zhou Maoxiu ¹Zhang Wei ¹Liu Qi ¹Li Xiaofeng ¹Liu Ming ¹Dai Yuehua¹

作者信息

折叠

摘要

关键词

RRAM/ hafnium oxide/ localized effect: oxygen vacancy/ DFT

Key words

RRAM/ hafnium oxide/ localized effect: oxygen vacancy/ DFT

引用本文复制引用

Zhao Qiang,Zhou Maoxiu,Zhang Wei,Liu Qi,Li Xiaofeng,Liu Ming,Dai Yuehua..Effects of interaction between defects on the uniformity of doping HfO2-based RRAM: a first principle study[J].半导体学报（英文版）,2013,34(3):1-6,6.

基金项目

Project supported by the National Natural Science Youth Foundation of China (No.61006064). （No.61006064）

半导体学报（英文版）

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ISSN：1674-4926

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