首页|期刊导航|半导体学报(英文版)|Simulation study on short channel double-gate junctionless field-effect transistors
半导体学报(英文版)2013,Vol.34Issue(3):35-42,8.DOI:10.1088/1674-4926/34/3/034004
Simulation study on short channel double-gate junctionless field-effect transistors
Simulation study on short channel double-gate junctionless field-effect transistors
摘要
关键词
short channel effect/ double-gate/ junctionless field-effect transistor/ device simulationKey words
short channel effect/ double-gate/ junctionless field-effect transistor/ device simulation引用本文复制引用
Wu Meile,Jin Xiaoshi,Chuai Rongyan,Liu Xi,Jong-Ho Lee..Simulation study on short channel double-gate junctionless field-effect transistors[J].半导体学报(英文版),2013,34(3):35-42,8.基金项目
Project supported by the Fund of Liaoning Province Education Department (No.L2012028). (No.L2012028)