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Simulation study on short channel double-gate junctionless field-effect transistors

Wu Meile Jin Xiaoshi Chuai Rongyan Liu Xi Jong-Ho Lee

半导体学报(英文版)2013,Vol.34Issue(3):35-42,8.
半导体学报(英文版)2013,Vol.34Issue(3):35-42,8.DOI:10.1088/1674-4926/34/3/034004

Simulation study on short channel double-gate junctionless field-effect transistors

Simulation study on short channel double-gate junctionless field-effect transistors

Wu Meile 1Jin Xiaoshi 1Chuai Rongyan 1Liu Xi 1Jong-Ho Lee1

作者信息

  • 折叠

摘要

关键词

short channel effect/ double-gate/ junctionless field-effect transistor/ device simulation

Key words

short channel effect/ double-gate/ junctionless field-effect transistor/ device simulation

引用本文复制引用

Wu Meile,Jin Xiaoshi,Chuai Rongyan,Liu Xi,Jong-Ho Lee..Simulation study on short channel double-gate junctionless field-effect transistors[J].半导体学报(英文版),2013,34(3):35-42,8.

基金项目

Project supported by the Fund of Liaoning Province Education Department (No.L2012028). (No.L2012028)

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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