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Extraction of interface state density and resistivity of suspended p-type silicon nanobridges

Zhang Jiahong Liu Qingquan Ge Yixian Gu Fang Li Min Mao Xiaoli Cao Hongxia

半导体学报（英文版）2013，Vol.34Issue(5)：7-12,6.

半导体学报（英文版）2013，Vol.34Issue(5)：7-12,6.DOI:10.1088/1674-4926/34/5/052002

Extraction of interface state density and resistivity of suspended p-type silicon nanobridges

Zhang Jiahong ¹Liu Qingquan ¹Ge Yixian ¹Gu Fang ²Li Min ¹Mao Xiaoli ¹Cao Hongxia¹

作者信息

1. Jiangsu Key Laboratory of Meteorological Observation and Information Processing, Nanjing University of Information Science & Technology, Nanjing 210044, China
2. College of Physics & Opto-Electronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
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摘要

关键词

interface state density/ resistivity/ silicon nanobridges/ bias voltages

Key words

interface state density/ resistivity/ silicon nanobridges/ bias voltages

引用本文复制引用

Zhang Jiahong,Liu Qingquan,Ge Yixian,Gu Fang,Li Min,Mao Xiaoli,Cao Hongxia..Extraction of interface state density and resistivity of suspended p-type silicon nanobridges[J].半导体学报（英文版）,2013,34(5):7-12,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.41075026),the Natural Science Foundation of Jiangsu Province (No.BK2012460),the Special Fund for Meteorology Research in the Public Interest (No.GYHY200906037),the Universities Natural Science Research Project of Jiangsu Province (No.12KJB510011),and the Priority Academic Program Development of Sensor Networks and Modern Meteorological Equipment of Jiangsu Higher Education Institutions. （No.41075026）

半导体学报（英文版）

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ISSN：1674-4926

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