The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVDOACSCDCSTPCD

作者：Zhu Shaoxin;Yan Jianchang;Zeng Jianping;Zhang Ning;Si Zhao;Dong Peng;Li Jinmin

作者单位：Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaInstitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaInstitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaInstitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaInstitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaInstitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaInstitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

中文关键词：n-AlxGa1-xN MOCVD δ-doping modulation-doping dopants diffusion

英文关键词：n-AlxGa1-xN MOCVD δ-doping modulation-doping dopants diffusion

刊名：《半导体学报（英文版）》 2013 (5)

相关项目：垂直结构紫外LED的研究

页码/页数：26-28,3

基金：Project supported by the National High Technology Research and Development Program of China (No.2011AA03A111) and the National Natural Science Foundation of China (No.61006038).

DOI：10.1088/1674-4926/34/5/053004