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A THz InGaAs/InP double heterojunction bipolar transistor with fmax =325 GHz and BVCBO =10.6 V

Cheng Wei Wang Yuan Zhao Yan Lu Haiyan Gao Hanchao Yang Naibin

半导体学报（英文版）2013，Vol.34Issue(5)：76-78,3.

半导体学报（英文版）2013，Vol.34Issue(5)：76-78,3.DOI:10.1088/1674-4926/34/5/054006

A THz InGaAs/InP double heterojunction bipolar transistor with fmax =325 GHz and BVCBO =10.6 V

Cheng Wei ¹Wang Yuan ¹Zhao Yan ¹Lu Haiyan ¹Gao Hanchao ¹Yang Naibin¹

作者信息

1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
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摘要

关键词

InP/ DHBT/ THz/ high breakdown

Key words

InP/ DHBT/ THz/ high breakdown

引用本文复制引用

Cheng Wei,Wang Yuan,Zhao Yan,Lu Haiyan,Gao Hanchao,Yang Naibin..A THz InGaAs/InP double heterojunction bipolar transistor with fmax =325 GHz and BVCBO =10.6 V[J].半导体学报（英文版）,2013,34(5):76-78,3.

半导体学报（英文版）

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ISSN：1674-4926

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