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Reactive ion etching of Si2Sb2Te5 in CF4/Ar plasma for a nonvolatile phase-change memory device

Li Juntao Liu Bo Song Zhitang Yao Dongning Feng Gaoming He Aodong Peng Cheng

半导体学报（英文版）2013，Vol.34Issue(5)：126-130,5.

半导体学报（英文版）2013，Vol.34Issue(5)：126-130,5.DOI:10.1088/1674-4926/34/5/056001

Reactive ion etching of Si2Sb2Te5 in CF4/Ar plasma for a nonvolatile phase-change memory device

Li Juntao ¹Liu Bo ²Song Zhitang ¹Yao Dongning ¹Feng Gaoming ¹He Aodong ³Peng Cheng¹

作者信息

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
2. University of Chinese Academy of Sciences, Beijing 100049, China
3. United Laboratory, Semiconductor Manufacturing International Corporation, Shanghai 201203, China
折叠

摘要

关键词

reactive ion etching/ phase-change material/ Si2Sb2Te5

Key words

reactive ion etching/ phase-change material/ Si2Sb2Te5

引用本文复制引用

Li Juntao,Liu Bo,Song Zhitang,Yao Dongning,Feng Gaoming,He Aodong,Peng Cheng..Reactive ion etching of Si2Sb2Te5 in CF4/Ar plasma for a nonvolatile phase-change memory device[J].半导体学报（英文版）,2013,34(5):126-130,5.

基金项目

Project supported by National Key Basic Research Program of China (Nos.2010CB934300,2011CBA00607,2011CB9328004),the National Integrate Circuit Research Program of China (No.2009ZX02023-003),the National Natural Science Foundation of China (Nos.60906004,60906003,61006087,61076121,61176122,61106001),the Science and Technology Council of Shanghai (Nos.11 DZ2261000,11QA1407800),and the Chinese Academy of Sciences (No.20110490761). （Nos.2010CB934300,2011CBA00607,2011CB9328004）

半导体学报（英文版）

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ISSN：1674-4926

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