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Planar InP-based Schottky barrier diodes for terahertz applications

Zhou Jingtao Yang Chengyue Ge Ji Jin Zhi

半导体学报（英文版）2013，Vol.34Issue(6)：54-57,4.

半导体学报（英文版）2013，Vol.34Issue(6)：54-57,4.DOI:10.1088/1674-4926/34/6/064003

Planar InP-based Schottky barrier diodes for terahertz applications

Zhou Jingtao ¹Yang Chengyue ¹Ge Ji ¹Jin Zhi¹

作者信息

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
折叠

摘要

关键词

Schottky barrier diodes/terahertz/cuttoff frequency

Key words

Schottky barrier diodes/terahertz/cuttoff frequency

引用本文复制引用

Zhou Jingtao,Yang Chengyue,Ge Ji,Jin Zhi..Planar InP-based Schottky barrier diodes for terahertz applications[J].半导体学报（英文版）,2013,34(6):54-57,4.

基金项目

Project supported by the State Key Laboratory of Advanced Optical Communication System & Networks and the National Basic Research Program of China (Nos.2011CB301704,2009CB320302). （Nos.2011CB301704,2009CB320302）

半导体学报（英文版）

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ISSN：1674-4926

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