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低反射率多晶硅绒面的湿法制备研究

张力典 沈鸿烈 岳之浩 王威 蒋晔

电子器件2013,Vol.36Issue(3):285-289,5.
电子器件2013,Vol.36Issue(3):285-289,5.DOI:10.3969/j.issn.1005-9490.2013.03.001

低反射率多晶硅绒面的湿法制备研究

Study on Preparation of Low Reflectivity Multicrystalline Silicon by Wet Etching

张力典 1沈鸿烈 1岳之浩 2王威 1蒋晔1

作者信息

  • 1. 南京航空航天大学材料科学与技术学院,南京210016
  • 2. 南京航空航天大学纳米智能材料器件教育部重点实验室,南京210016
  • 折叠

摘要

Abstract

In the preparation process of multicrystalline silicon solar cells,multicrystalline silicon surface texturing is a hot research topic at all times.The surface reflectivity and morphology of the textured silicon are affected by various factors.The multicrystalline silicon wafers were etched in the mixed solution of HF,HNO3 and H2O.Etching time,the volume ratios of HF and HNO3 and the volume of H2O in the solution were studied.The surface reflectances of the etched multicrystalline silicon wafers were analyzed by spectrophotometer and the morphologies of the textured silicon wafers were observed by scanning electron microscopy.It was found that the volume ratios of HF,HNO3 and H2O has a major impact on the morphologies of etching pits,which determine the surface reflectivity.The surface reflectivity in the range of 300 nm and 900 nm is only 20.4% when the solution volume ratio of HF,HNO3 and H2O is 5∶1∶2 and the etching time is 3 min,which is resulted from the narrow and deep etching pits in the textured silicon surface,where the absorption of light is increased and the reflectivity is reduced.

关键词

多晶硅制绒/腐蚀时间/体积比/反射率/表面形貌

Key words

multicrystalline silicon texturization / etching time / volume ratio / reflectivity / surface morphology

分类

能源科技

引用本文复制引用

张力典,沈鸿烈,岳之浩,王威,蒋晔..低反射率多晶硅绒面的湿法制备研究[J].电子器件,2013,36(3):285-289,5.

基金项目

国家自然科学基金项目(61176062) (61176062)

江苏高校优势学科建设工程项目 ()

电子器件

OA北大核心CSTPCD

1005-9490

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