国防科技大学学报2013，Vol.35Issue(3)：99-103,5.
室温下单电子晶体管3种临界尺寸的确定
Determination for three kinds of critical size of single-electron transistor at room temperature
摘要
Abstract
To improve the capability of the single-electron transistor (SET) for the practical application,it is inevitable to make the researches under the condition of room temperature.Initialized from the orthodox theory,this research calculated the critical size of coulomb island of SET which can work normally at room temperature:the memory device is 6.5nm,the logic device is 1.5nm; it also calculated the critical size of coulomb island of SET when the energy quantization effect at room temperature,4.7nm,appeared.Furthermore,it verified and analyzed these two kinds of critical size.In addition,through a comparative analysis,it drew conclusion that all logical devices must consider the energy quantization effect and all memory devices should consider the energy quantization effect at room temperature.The analysis result shows that determination for critical size of coulomb island has important significance for the application of SET.关键词
单电子晶体管/正统理论/能量量子化/临界尺寸/室温Key words
single-electron transistor/ orthodox theory/ energy quantization/ critical size/ at room temperature分类
信息技术与安全科学引用本文复制引用
陈小保,邢座程,隋兵才..室温下单电子晶体管3种临界尺寸的确定[J].国防科技大学学报,2013,35(3):99-103,5.基金项目
国家自然科学基金资助项目(61170083,61106084) （61170083,61106084）
教育部博士点资助项目(20114307110001) （20114307110001）
国家部委资助项目 （）
