硅酸盐学报2013，Vol.41Issue(6)：803-807,5.DOI:10.7521/j.issn.0454-5648.2013.06.14
物理气相传输法制备大面积AlN单晶
Physical Vapor Transport Growth of Large Area AlN Single Crystal
齐海涛 1洪颖 1王香泉 1王利杰 1张志欣 1郝建民1
作者信息
- 1. 中国电子科技集团公司第四十六研究所,天津 300220
- 折叠
摘要
Abstract
A great AlN single crystal layer with the size of 42 mm in diameter and 700 μm in thickness was grown on SiC seed substrate by a physical vapor transport method.The crystal growth system and process condition were introduced.The phase constitutes and morphology of the sample grown was analyzed.The results show that the SiC-AlN interface in the crystal appears clear,and the AlN layer is translucent and planar with the microstep surface character.It is indicated that the AlN layer has a great crystallization degree and does not contain any impurity phases.The polytype of the grown AlN single crystal is a wurtzite-2H type structure and its grovth surface is a perfect [0001] oriented c plane.关键词
氮化铝单晶/物理气相传输法/碳化硅籽晶Key words
aluminum nitride single crystal/ physical vapor transport/ silicon carbide seed分类
数理科学引用本文复制引用
齐海涛,洪颖,王香泉,王利杰,张志欣,郝建民..物理气相传输法制备大面积AlN单晶[J].硅酸盐学报,2013,41(6):803-807,5.
