硅酸盐学报2013，Vol.41Issue(6)：808-811,4.DOI:10.7521/j.issn.0454-5648.2013.06.15
快中子辐照直拉硅中的空位型缺陷
Monovacancy Type Defects in Fast Neutron Irradiated Czochralski Silicon
摘要
Abstract
The irradiation defects in neutron-irradiated Czochralski silicon (CZSi) were analyzed by positron annihilation spectroscopy and Fourier transform infrared (FTIR) spectroscopy.The results show that there are the massive monovacancy-type defects (VO)and multi-vacancy-type defects (V2 and V2O) in irradiated CZSi.After heat-treatment at 200-450 ℃,the absorption bands at 720and 919.6 cm-1 in measured FTIR spectra are associated with the monovacancy-type defects,and they have the same positron lifetime as VO (i.e.,290 ps).After heat-treatment at 450-600 ℃,the monovacancy-type is eliminated gradually,the V4-type defects are enhanced,and the concentration of the V4-type defects reaches a maximum of 70％ after heat-treatment at 600 ℃.关键词
直拉硅/正电子湮没/中子辐照/空位型缺陷Key words
Czochralski silicon/ positron annihilation/ neutron irradiate/ vacancy-type defect分类
信息技术与安全科学引用本文复制引用
杨帅,徐建萍,邓晓冉,陈贵锋..快中子辐照直拉硅中的空位型缺陷[J].硅酸盐学报,2013,41(6):808-811,4.基金项目
国家自然科学基金项目(10904109,50872028) （10904109,50872028）
河北省教育厅科研计划项目(2009318) （2009318）
天津理工大学校级项目(LGYM-201016)资助. （LGYM-201016）
