含能材料2013，Vol.21Issue(3)：301-305,5.DOI:10.3969/j.issn.1006-9941.2013.03.005
RDX单晶的生长诱导位错表征
Growth-induced Dislocation of RDX Single Crystal
摘要
Abstract
Bulk (about 40 mm x 40 mm x 30 mm) single crystal of cyclotrimethylene trinitramine (RDX) were prepared from acetone saturated solution by solvent evaporation techniques.Single crystal was cut by diamond wire cutter along some oriented crystal plane and variable thickness single crystal slices were obtained.The growth-induced dislocation in RDX single crystals was estimated by high-resolution X-ray Triple Axis diffraction (TAXRD) rocking curve (ω-scan),and the full width at half maximum (FWHM) of (210),(200) and (111) planes were 35.35,45.31 and 77.92 arcsec respectively.It can be concluded that the dislocation density in (111) plane is largest,while (210) crystal plane is least,and the growth of (111) crystal plane is fastest quickest,while (210) crystal plane is slowest.关键词
有机化学/RDX大单晶/摇摆曲线/生长诱导位错Key words
organic chemistry/ RDX bulk single crystal/ rocking curve/ growth-induced dislocation分类
军事科技引用本文复制引用
周小清,李洪珍,徐容,王述存,黄明..RDX单晶的生长诱导位错表征[J].含能材料,2013,21(3):301-305,5.基金项目
国家自然科学基金面上项目(No.11072225)和中国工程物理研究院面上基金(No:2010B0302040,2011B0201032) （No.11072225）
