红外与毫米波学报2013，Vol.32Issue(3)：210-213,224,5.DOI:10.3724/SP.J.1010.2013.00210
长波InAs/GaSb Ⅱ类超晶格红外探测器
Long wavelength infrared detector based on Type-Ⅱ InAs/GaSb superlattice
摘要
Abstract
A 12.5 μm long wavelength infrared detector based on InAs/GaSb Type-Ⅱ superlattice was presented in this work.Superlattice materials were grown on GaSb substrates using MBE technology.Absorber structure for long wavelength detector was designed to be 15ML (InAs)/7ML (GaSb).The detector used a PBIN multiple heterostructures to decrease the dark current.The dark current I-V curve,responsivity spectra and blackbody current responsivity were measured at 77 K.At this temperature,RmaxA product was 2.5 Ωcm2 for the device with a photo sensitive area of 100 μm × 100μm.At zero bias,a current responsivity of 1.29 A/W was measured for the detector,which correspond to a blackbody detectivity of 2.1 × 109 cmHz1/2/W.Quantum efficiency at 11 μm was measured to be 14.3％.Dark current characteristics were simulated with four kinds of probable transport mechanisms.The results showed that the dominated dark current of the detector is Generation-Recombination current.关键词
InAs/GaSb Ⅱ类超晶格/长波12.5μm/暗电流Key words
InAs/GaSb superlattice/ long wavelength/ dark current分类
信息技术与安全科学引用本文复制引用
周易,陈建新,徐庆庆,徐志成,靳川,许佳佳,金巨鹏,何力..长波InAs/GaSb Ⅱ类超晶格红外探测器[J].红外与毫米波学报,2013,32(3):210-213,224,5.基金项目
国家自然科学基金(61176082) （61176082）
Supported by the National Natural Science Foundation of China (61176082) （61176082）
