人工晶体学报2013，Vol.42Issue(6)：1021-1025,5.
氢气对AlN薄膜择优取向的作用机制
Influence Mechanisms of Hydrogen on the Preferred Orientation of AlN Films
摘要
Abstract
AlN films with (100) and (002) preferential orientations were deposited by pulsed-DC reactive magnetron sputtering on Si substrate.The target voltage was lowered by decreasing the sputtering power or increasing the hydrogen concentration.Because the energy of deposited particles became smaller,the film preferential orientation changed from (002) plane to (100) plane.When hydrogen was added to the sputtering atmosphere,the oxygen content in the films was reduced.The surface morphology and the surface roughness were changed simultaneously.The effects of sputtering power and hydrogen concentration on the film preferential orientation showed that hydrogen influenced the film preferential orientation by reducing the deposited particles'energy and the adsorption generated at the substrate surface.关键词
AlN薄膜/反应磁控溅射/择优取向/溅射功率/氢气浓度Key words
AlN film/ reactive magnetron sputtering/ preferred orientation/ sputtering power/ hydrogen concentration分类
通用工业技术引用本文复制引用
姜川,周灵平,彭坤,朱家俊,李德意..氢气对AlN薄膜择优取向的作用机制[J].人工晶体学报,2013,42(6):1021-1025,5.基金项目
教育部新世纪优秀人才计划(NCET-11-0127) （NCET-11-0127）
