人工晶体学报2013，Vol.42Issue(6)：1041-1045,5.
Sb2O3掺杂对Pr6O11压敏电阻微结构和电学性能的影响
Effect of Sb2O3 Doping on the Microstructure and Electrical Properties of Pr6O11 Varistors
摘要
Abstract
Sb2O3-doped Pr6O11 varistors were prepared by conventional ceramic processing techniques,the microstructure and electrical properties of the ceramic samples were studied using modern analysis and testing technology.The samples reveal simple microstructure consisting of only Pr6O11 phase,the secondary phase is not found.The relative density and grain size of the samples decrease with Sb2O3 content increasing.The nonlinear coefficient,breakdown voltage and grain boundary resistance first decrease and then increase Sb2O3 content increasing,the nonlinear coefficient can reach up to 134.It is proposed that Sb doping do not react with Pr6O11,the vapor pressure produced by decomposed Sb2O4 can reduce the relative density,grain sizes and barrier height of the samples,the change of electrical properties can be attributed to the combined action of relative density,grain sizes and barrier height.关键词
压敏电阻/氧吸附/Pr6O11/Sb2O3Key words
varistor/ oxygen adsorption/ Pr6O11 / Sb2O3分类
通用工业技术引用本文复制引用
王秀芳,李统业..Sb2O3掺杂对Pr6O11压敏电阻微结构和电学性能的影响[J].人工晶体学报,2013,42(6):1041-1045,5.基金项目
教育部"春晖计划"资助项目(Z2011120) （Z2011120）
中央高校基本科研业务费专项资金资助项目(SWJTU2011BR018) （SWJTU2011BR018）
