人工晶体学报2013，Vol.42Issue(6)：1154-1158,5.
退火对硫化方法制备ZnS薄膜特性的影响
Influence of Annealing on the Properties of ZnS Thin Films Prepared by Sulfidation
摘要
Abstract
Hexagonal ZnS thin films were produced by annealing of ZnO thin films in H2S,where ZnO was deposited by reactive magnetron sputtering and then annealed in air.The properties of the films were characterized by using the XRD,UV-Vis transmission spectra and SEM.Enhancing in-air-annealing temperature resulted in the improved crystallinity of ZnS thin films.With in-air-annealing temperature ＞ 500 ℃,the crystallinity for the ZnS thin films deteriorated.Besides,at sulfidation temperature ＜ 400 ℃,ZnO was converted partly to ZnS while sulfidation temperature ≥ 400 ℃,ZnO was completely converted to ZnS.ZnS thin films obviously had the greater grain size than ZnO thin films.These ZnS thin films exhibited the optical transparency as high as ～ 80％ in the visible region with band-gap energies of 3.61-3.70 eV.关键词
ZnS薄膜/溅射/空气退火/硫化Key words
ZnS thin film/ sputtering/ in-air annealing/ sulfidation分类
数理科学引用本文复制引用
张仁刚,卓雯,王玉华,彭顺金,陈克亮,徐千山..退火对硫化方法制备ZnS薄膜特性的影响[J].人工晶体学报,2013,42(6):1154-1158,5.基金项目
湖北省教育厅科研计划重点项目(D20121109) （D20121109）
武汉科技大学绿色制造与节能减排科技研究中心开放基金(B1220) （B1220）
