人工晶体学报2013，Vol.42Issue(6)：1203-1207,5.
Nd掺杂对磁控溅射Bi4-xNdxTi3O12铁电薄膜结构和性能的影响
Effects of Nd Doping on Structure and Properties of Bi4-xNdxTi3O12 Ferroelectric Thin Films
摘要
Abstract
Bi4-xNdxTi3O12 ferroelectric films fabricated on p-Si substrates by magnetron sputtering.The effects of Nd doping on structure and properties of Bi4-xNdxTi3O12 films were investigated.Bi4-xNdxTi3O12films had the same structure as Bi4Ti3O12 with smaller and more uniform grains.The dielectric and ferroelectric properties of Bi4-xNdxTi3O12 films were improved by Nd doping.Bi4-xNdxTi3O12 films have better dielectric and ferroelectric properties with Pr =20.6 μC/cm2,Ec ＜ 150 kV/cm,εr ＞ 250,tanδ ＜0.1 and clockwise C-V curves of Ag/Bi4-xNdxTi3Ol2/p-Si with a memory window of 1.6 V when x =0.30-0.40,while an excessive Nd (x ＞ 0.45) doping would lead to bad dielectric and ferroelectric properties.关键词
铁电薄膜/Bi4-xNdxTi3O12/介电性能/铁电性能Key words
ferroelectric films/ Bi4-xNdxTi3O12 / dielectric properties/ ferroelectric properties分类
信息技术与安全科学引用本文复制引用
陈彬,燕红..Nd掺杂对磁控溅射Bi4-xNdxTi3O12铁电薄膜结构和性能的影响[J].人工晶体学报,2013,42(6):1203-1207,5.
