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Fabrication and characterization of a GaN/(4H)SiC vertical pn power diode using direct and interfaced epitaxial-growth approaches

Bose Srikanta Mazumder S K

半导体学报（英文版）2013，Vol.34Issue(4)：20-23,4.

半导体学报（英文版）2013，Vol.34Issue(4)：20-23,4.DOI:10.1088/1674-4926/34/4/044001

Fabrication and characterization of a GaN/(4H)SiC vertical pn power diode using direct and interfaced epitaxial-growth approaches

Bose Srikanta ¹Mazumder S K¹

作者信息

1. Laboratory for Energy and Switching-Electronics Systems, Department of Electrical and Computer Engineering,University of Illinois at Chicago, Chicago, IL: 60607, USA
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摘要

关键词

GaN/ (4H)SiC/ vertical pn power diode/ power electronics

Key words

GaN/ (4H)SiC/ vertical pn power diode/ power electronics

引用本文复制引用

Bose Srikanta,Mazumder S K..Fabrication and characterization of a GaN/(4H)SiC vertical pn power diode using direct and interfaced epitaxial-growth approaches[J].半导体学报（英文版）,2013,34(4):20-23,4.

基金项目

Project supported by the US National Science Foundation (No.0823983). （No.0823983）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

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