半导体学报（英文版）2013，Vol.34Issue(4)：24-29,6.DOI:10.1088/1674-4926/34/4/044002
A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices
A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices
Godwin Raj 1Hemant Pardeshi 1Sudhansu Kumar Pati 1N Mohankumar 2Chandan Kumar Sarkar1
作者信息
- 1. Nano Device Simulation Laboratory, Electronics and Telecommunication Engineering Department, Jadavpur University,Kolkata-700 032, India
- 2. SKP Engineering College, Tiruvannamalai, Tamilnadu-606 611, India
- 折叠
摘要
关键词
2DEG/ Fermi level/ AlInGaNKey words
2DEG/ Fermi level/ AlInGaN引用本文复制引用
Godwin Raj,Hemant Pardeshi,Sudhansu Kumar Pati,N Mohankumar,Chandan Kumar Sarkar..A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices[J].半导体学报（英文版）,2013,34(4):24-29,6.
