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An extrinsic fmax ＞ 100 GHz InAlN/GaN HEMT with AlGaN back barrier

Liu Bo Feng Zhihong Dun Shaobo Zhang Xiongwen Gu Guodong Wang Yuangang Xu Peng

半导体学报（英文版）2013，Vol.34Issue(4)：46-49,4.

半导体学报（英文版）2013，Vol.34Issue(4)：46-49,4.DOI:10.1088/1674-4926/34/4/044006

An extrinsic fmax ＞ 100 GHz InAlN/GaN HEMT with AlGaN back barrier

Liu Bo ¹Feng Zhihong ¹Dun Shaobo ¹Zhang Xiongwen ¹Gu Guodong ¹Wang Yuangang ¹Xu Peng¹

作者信息

1. Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
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摘要

关键词

AlGaN back barrier/ InAlN/ high-electron-mobility transistors/ power gain cutoff frequency

Key words

AlGaN back barrier/ InAlN/ high-electron-mobility transistors/ power gain cutoff frequency

引用本文复制引用

Liu Bo,Feng Zhihong,Dun Shaobo,Zhang Xiongwen,Gu Guodong,Wang Yuangang,Xu Peng..An extrinsic fmax ＞ 100 GHz InAlN/GaN HEMT with AlGaN back barrier[J].半导体学报（英文版）,2013,34(4):46-49,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.60890192,60876009). （Nos.60890192,60876009）

半导体学报（英文版）

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ISSN：1674-4926

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