Analysis of the dV/dt effect on an IGBT gate circuit in IPMOACSCDCSTPCD

作者：Hua Qing;Li Zehong;Zhang Bo;Huang Xiangjun;Cheng Dekai

作者单位：State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaMidea Air-Conditioning & Refrigeration Research Institute, Foshan 528311, ChinaMidea Air-Conditioning & Refrigeration Research Institute, Foshan 528311, China

中文关键词：IGBT dV/dt voltage spike IPM

英文关键词：IGBT dV/dt voltage spike IPM

刊名：《半导体学报（英文版）》 2013 (4)

页码/页数：64-68,5

基金：Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (No.2011ZX02504).

DOI：10.1088/1674-4926/34/4/045001