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A 23 GHz low power VCO in SiGe BiCMOS technology

Huang Yinkun Wu Danyu Zhou Lei Jiang Fan Wu Jin Jin Zhi

半导体学报（英文版）2013，Vol.34Issue(4)：76-79,4.

半导体学报（英文版）2013，Vol.34Issue(4)：76-79,4.DOI:10.1088/1674-4926/34/4/045003

Huang Yinkun ¹Wu Danyu ²Zhou Lei ¹Jiang Fan ²Wu Jin ¹Jin Zhi²

作者信息

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
折叠

VCO/ low power/ SiGe BiCMOS

VCO/ low power/ SiGe BiCMOS

Huang Yinkun,Wu Danyu,Zhou Lei,Jiang Fan,Wu Jin,Jin Zhi..A 23 GHz low power VCO in SiGe BiCMOS technology[J].半导体学报（英文版）,2013,34(4):76-79,4.

Project supported by the State Key Development Program for Basic Research of China (No.2010CB327502). （No.2010CB327502）

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ISSN：1674-4926

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