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New de-embedding structures for extracting the electrical parameters of a through-silicon-via pair

Zhou Jing Wan Lixi Li Jun Wang Huijuan Dai Fengwei Daniel Guidotti Cao Liqiang

半导体学报(英文版)2013,Vol.34Issue(4):80-86,7.
半导体学报(英文版)2013,Vol.34Issue(4):80-86,7.DOI:10.1088/1674-4926/34/4/045004

New de-embedding structures for extracting the electrical parameters of a through-silicon-via pair

New de-embedding structures for extracting the electrical parameters of a through-silicon-via pair

Zhou Jing 1Wan Lixi 1Li Jun 1Wang Huijuan 1Dai Fengwei 1Daniel Guidotti 1Cao Liqiang1

作者信息

  • 1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 折叠

摘要

关键词

through-silicon vias/ de-embedding structure/ microwave network/ multiple solutions/ transmission matrix/ equivalent circuit

Key words

through-silicon vias/ de-embedding structure/ microwave network/ multiple solutions/ transmission matrix/ equivalent circuit

引用本文复制引用

Zhou Jing,Wan Lixi,Li Jun,Wang Huijuan,Dai Fengwei,Daniel Guidotti,Cao Liqiang..New de-embedding structures for extracting the electrical parameters of a through-silicon-via pair[J].半导体学报(英文版),2013,34(4):80-86,7.

基金项目

Project supported by the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences.Yu Daquan also appreciates the support by 100 Talents Program (No.Y0YB049001) of Chinese Academy of Sciences. (No.Y0YB049001)

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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