发光学报2013，Vol.34Issue(6)：692-697,6.DOI:10.3788/fgxb20133406.0692
电子束泵浦ZnO/ZnMgO量子阱的最佳激发电压
Decrease of Optimal Accelerating Voltage of ZnO-based Quantum Wells Pumped by Electron Beam
摘要
Abstract
Cathodoluminescence behavior vs.accelerating voltage of electron beam in ZnO/ZnMgO multi-quantum wells was reported in this paper.The samples were grown on sapphire substrate by plasma-assisted molecular beam epitaxy.By exciton tunneling,the excitation efficiency was improved significantly.In a sample with asymmetric double-quantum-wells,a marked reduction of the optimal acceleration voltage from 7 kV to 5 kV was obtained compared to the symmetrical multiquantum well sample.关键词
ZnO/量子阱/电子束泵浦/激子隧穿Key words
ZnO / quantum wells/ electron beam pumped/ exciton tunneling分类
数理科学引用本文复制引用
尚开,张振中,李炳辉,徐海洋,张立功,赵东旭,刘雷,王双鹏,申德振..电子束泵浦ZnO/ZnMgO量子阱的最佳激发电压[J].发光学报,2013,34(6):692-697,6.基金项目
国家自然科学基金(21100146) （21100146）
国家"973计划"(2011CB302006,2011CB302002)资助项目 （2011CB302006,2011CB302002）
