4He和12C离子Rutherford背散射的Geant4模拟OA北大核心CSCDCSTPCD
Geant4-Based Simulation of 4 He and 12C Ions Rutherford Backscattering on Thin Films
利用Geant4程序模拟270,500 keV 4 He和12C离子垂直入射Au,Ag,Cu薄膜上的Rutherford背散射谱(RBS),并讨论材料、厚度和入射离子能量对背散射谱的影响.结果表明,能量较大的12C离子具有较好的质量分辨率.
The Rutherford backscattering spectra (RBS) of 4 He and 12C normally incident on Au,Ag,Cu thin films at 270 keV and 500 keV were simulated via Geant4.Effects of different materials,thickness and energy of incident ions on RBS were discussed.The characters of 4He,12C RBS were analyzed.It was found that the mass resolution is much better for 12C RBS than that for 4He RBS.
王振超;马玉刚;杨海芳;牛璐莹;周庆;赵广义;宋明珠
吉林大学物理学院,长春130012吉林大学物理学院,长春130012唐山市人民医院,河北唐山063001中国科学院等离子体物理研究所,合肥230031吉林大学物理学院,长春130012吉林大学物理学院,长春130012吉林大学物理学院,长春130012
数理科学
Geant4重离子RBS分析薄膜
Geant4 heavy-ion RBS analysis thin films
《吉林大学学报（理学版）》 2013 (4)
吉林大学物理学基地
712-714,3
国家自然科学基金(批准号:J1103202).
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