发光学报2013，Vol.34Issue(3)：345-350,6.DOI:10.3788/fgxb20133403.0345
新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高
Performance Improvement of Blue InGaN Light-emitting Diode with A Special Designed Electron-blocking Layer
摘要
Abstract
Three kinds of electron-blocking layer (EBL) AlGaN based LED were compared numerically.They are conventional AlGaN EBL,AlGaN-GaN-AlGaN (AGA) and gradual Al composition AlGaN-GaN-AlGaN (GAGA)EBL.Their porfermance were analyzed involved carrier concentration in the active region,energy band diagram,electrostatic field and internal quantum efficiency (IQE).The results indicate that the LED with an GAGA EBL exhibits a better hole injection efficiency,a more peaceable efficiency droop,a lower electron leakage,and a smaller electrostatic field than the LED with a conventional AlGaN EBL or with an AGA EBL.关键词
发光二极管(LED)/电子阻挡层(EBL)/数值模拟,效率下降Key words
light-emitting diode / electron-blocking layer/ numerical simulation / efficiency droop分类
信息技术与安全科学引用本文复制引用
丁彬彬,赵芳,宋晶晶,熊建勇,郑树文,喻晓鹏,许毅钦,周德涛,张涛..新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高[J].发光学报,2013,34(3):345-350,6.基金项目
国家自然科学基金(61176043) （61176043）
广东省战略性新兴产业专项资金(2010A081002005,2011A081301003,2012A080304016) （2010A081002005,2011A081301003,2012A080304016）
华南师范大学青年教师科研培育基金(2012KJ018)资助项目 （2012KJ018）
