微型电脑应用2013，Vol.29Issue(3)：14-16,3.
基于噪声抵消和线性度提高的差分LNA的设计
Design of CMOS LNA by Noise Reduction and Linearity Improvement
纪娜 1何国荣2
作者信息
- 1. 杨凌职业技术学院信息工程学院,陕西杨凌,712100
- 2. 杨凌职业技术学院机电工程学院,陕西杨凌,712100
- 折叠
摘要
Abstract
Based on TSMC 0.18μm CMOS technology,a low-noise,high-gain,and high-linearity differential cascode LNA is designed.Compared with the traditional cascode structure,a couple of cross-coupling capacitors and inductors are connected at the gates of common gate transistors to eliminate the influence of the noise of common gate transistors,improve linearity and gain.Simulation results indicate that the noise figure is only 1.3 dB,the forward gain is 17.8 dB,the input and output impedances match well,the input third-order intercept point (IIP3) is-0.9 dBm,and power dissipation is less than 10mW at 2.45GHz.关键词
低噪声放大器/线性度提高/低噪声/交叉耦合电容Key words
Low-noise Amplifier (LNA)/ Linearity Improvement/ Low Noise/ Cross-coupling Capacitor分类
信息技术与安全科学引用本文复制引用
纪娜,何国荣..基于噪声抵消和线性度提高的差分LNA的设计[J].微型电脑应用,2013,29(3):14-16,3.
