东南大学学报（自然科学版）2013，Vol.43Issue(4)：691-694,4.DOI:10.3969/j.issn.1001-0505.2013.04.004
动态应力下功率n-LDMOS器件热载流子退化恢复效应
Recovery effect of hot-carrier degradation for n-LDMOS device under dynamic conditions
摘要
Abstract
The recovery effect of hot-carrier degradation for n-LDMOS (lateral double-diffused metal-oxide semiconductor)device under dynamic conditions is investigated by experiments and theoretical analysis.The charge pumping (CP) experimental results and the simulation results by technology computer aided design (TCAD) show that,under the different dynamic conditions,the two main degradation mechanisms in n-LDMOS device,hot-carrier injection at the bird's beak region and interface state generation at the channel region,exhibit obvious recovery effect.When two different stresses in 3 600 s are exerted,the CP current curves at the end moment of each phase show that the de-trapping effects of hot-carders really happen during the transformation of stress.When three different stresses in 3 600 s are exerted,the CP current curves at the end moment of each phase show that the produced interface states compound to some extent as the device is on off stage.关键词
热载流子/恢复效应/退陷阱效应/电荷泵Key words
hot-carrier/recovery effect/de-trapping effect/charge pumping分类
信息技术与安全科学引用本文复制引用
徐申,张春伟,刘斯扬,王永平,孙伟锋..动态应力下功率n-LDMOS器件热载流子退化恢复效应[J].东南大学学报（自然科学版）,2013,43(4):691-694,4.基金项目
国家自然科学基金资助项目(61204083)、新世纪优秀人才支持计划资助项目(NCET-10-0331)、江苏省自然科学基金资助项目(BK2011059)、东南大学无锡分校科研引导资金助项目. （61204083）
