发光学报2013，Vol.34Issue(7)：811-815,5.DOI:10.3788/fgxb20133407.0811
分子束外延生长亚稳态ZnCdSe/MgSe低维量子阱结构及其光学性质
Optical Properties of ZnxCd1-xSe/MgSe Quantum Wells Grown on InP Substrate by Molecular Beam Epitaxy
李炳生 1SHEN Ai-dong2
作者信息
- 1. 哈尔滨工业大学基础与交叉科学研究院,黑龙江哈尔滨150080
- 2. Department of Electrical Engineering, The City College of the City University of New York, New York 10031, USA
- 折叠
摘要
Abstract
We studied the band gap structure of ZnxCd1-xSe/MgSe heterostructure grown on (001) InP substrates by molecular beam epitaxy.In the single quantum well growth of Znx Cd1-xSe/MgSe,the in situ reflection high energy electron diffraction intensity oscillations and streak patterns demonstrate that zincblende (ZB) MgSe has been formed.Furthermore,with the introduction of thick Znx Cd1-xSe spacer layers,the ZB MgSe/ZnxCd1-xSe multi-quantum wells can be obtained.Based on the results of photoluminescence and calculation,the offset for conduction and valence band in MgSe/ZnxCd1-xSe heterostructure is estimated to be 1.2 eV and 0.27 eV,respectively.Using the estimated value of band offset,the calculated ISB transition energies agree well with results of infrared absorption experiments.With such a large band offset,ISB transitions in this material system could be extended to 1.55 μm within an asymmetric double quantum wells with coupling effects.关键词
分子束外延/Ⅱ-Ⅵ族量子阱/闪锌矿MgSe/能带带阶Key words
molecular beam epitaxy/ Ⅱ-Ⅵ quantum wells/ zincblende MgSe/ band offset分类
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李炳生,SHEN Ai-dong..分子束外延生长亚稳态ZnCdSe/MgSe低维量子阱结构及其光学性质[J].发光学报,2013,34(7):811-815,5.
