人工晶体学报2013，Vol.42Issue(7)：1252-1256,5.
导模法蓝宝石单晶的位错缺陷及其力学性能的研究
Research on Mechenical Properties and Dislocation Defects of Sapphire Crystal Grown by Edge-Defined Film-Fed Method
摘要
Abstract
Sapphire crystals (60 mm× 2.5 mm × 300 mm) with (11-20) lattice direction were grown by the edge-defined film-fed crystal growth method (EFG).The (0001) lattice plan dislocation features were observed by the metallographic microscope method under chemical corrosion,and the flexural strength were tested by the INSTRON-1195 universal testing machine.The results showed that when the dislocation defect in crystal distributed uniformly,sapphire wafers should been occurred cleavage cracking in specific lattice plane under certain compressive stress.However,the flexural strength decreased rapidly when the wafers had dislocation line structure.关键词
导模法/蓝宝石/位错缺陷/弯曲强度Key words
edge-defined film-fed method/ sapphire / dislocation defect/ flexural strength分类
数理科学引用本文复制引用
胡克艳,唐慧丽,王静雅,钱小波,徐军,杨秋红..导模法蓝宝石单晶的位错缺陷及其力学性能的研究[J].人工晶体学报,2013,42(7):1252-1256,5.基金项目
长江学者和创新团队发展计划(IRT1059) （IRT1059）
