人工晶体学报2013，Vol.42Issue(7)：1267-1271,5.
水平定向结晶法生长大尺寸板状蓝宝石缺陷研究
Study on Defects in Large-Flat Sapphire Crystal Grown by Horizontal Directional Solidification
摘要
Abstract
The large-flat sapphire single crystal was successfully grown by horizontal directional solidification (HDS) method.The defects in grown crystal were analyzed by laser scanning confocal microscope,scanning electron microscope and chemical etching method.The macro defect types and the morphology of dislocations were observed and discussed.The distribution and formal reasons of defects were also analyzed.Bubbles and inclusions were regarded as main macro defects.The constituents of inclusions were detected by electron probe microanalysis,and formal reasons of inclusions were also investigated.The results indicated that the small inclusions of block and erose shape were formed by concentrated C and Si impurities which gathered other impurities,and the large inclusions of strip and circular shape were due to great mismatch of stoichiometric composition in O and Al elements.The morphology of dislocations in grown crystal was triangle etch pits analyzed by chemical etching method,and the dislocations form were discussed as well.关键词
蓝宝石/缺陷/位错/水平定向结晶法Key words
sapphire/ defects / dislocation/ horizontal directional solidification method分类
数理科学引用本文复制引用
郭怀新,张明福,聂颖,韩杰才,许承海,赵业权..水平定向结晶法生长大尺寸板状蓝宝石缺陷研究[J].人工晶体学报,2013,42(7):1267-1271,5.基金项目
哈尔滨工业大学创新基金(HIT.NSRIF.201158) （HIT.NSRIF.201158）
