人工晶体学报2013，Vol.42Issue(7)：1330-1335,1342,7.
镶嵌在SiO2基体中SiC纳米晶的紫外光致发光
Ultraviolet Photoluminescence of SiC Nanocrystal Embedded in Silica Wafers
摘要
Abstract
Silica wafers were implanted with C+ at an energy of 60 keV to a dose of 2 × 1016 cm-2 followed by a thermal annealing.Energy of the photoluminescence (PL) peaks at 2.601 eV,2.857 eV,3.085 eV,3.249 eV,3.513 eV and 3.751 eV have been observed at the room temperature.The PL peak with an energy of 3.249 eV related to 4H-SiC.Photoluminescence excitation (PLE) and infrared absorption (IRA) techniques have been used to characterize these samples to find out origin of the new PL peak (energy of 3.751 eV).Energy of the PLE peak at 4.429 eV and the IRA peak at 0.205 eV (1650 cm-1) indicate that the PL peak with an energy of 3.751 eV can be ascribed to oxygen vacancy.关键词
SiC纳米晶/SiO2薄膜/氧空位Key words
SiC nanocrystal/ silica film/ oxygen vacancy分类
信息技术与安全科学引用本文复制引用
卢赛,王茺,王文杰,杨宇..镶嵌在SiO2基体中SiC纳米晶的紫外光致发光[J].人工晶体学报,2013,42(7):1330-1335,1342,7.基金项目
国家自然科学基金(10964016,10990103,11274266) （10964016,10990103,11274266）
教育部科学技术重点项目(210207) （210207）
云南大学校级理工基金项目(2012CG008) （2012CG008）
