人工晶体学报2013，Vol.42Issue(7)：1343-1346,1352,5.
溅射功率对射频磁控溅射制备非晶In-Ga-Zn-O薄膜的影响
Effect of Sputtering Power on the Preparation of In-Ga-Zn-O Films by RF Magnetron Sputtering
摘要
Abstract
Transparent conducting In-Ga-Zn-O films were grown successfully on glass substrates at room temperature by RF magnetron sputtering.The effects of different deposition power on the structure,electrical and optical properties have been investigated systemically.The results of X-ray diffraction spectra (XRD) show that the films with different power were amorphous.The growth speed increases linearly and the electrical resistivity decreases gradually as the deposition power increasing from 80 W to 150 W.Optical transmission spectra of the In-Ga-Zn-O samples demonstrate that the abrupt absorption edge of the film appears at about 350 nm,implying high quality of the In-Ga-Zn-O film prepared at different deposition power mentioned above.The optical band gap of In-Ga-Zn-O films decreases as the deposition power increasing.All the films present a high transmittance of above 90％ in the visible range from 500 nm to 800 nm.关键词
In-Ga-Zn-O薄膜/溅射功率/电阻率/禁带宽度/透过率Key words
In-Ga-Zn-O film/ sputtering power/ resistivity/ band gap/ transmittance分类
数理科学引用本文复制引用
张锁良,贾长江,郝彦磊,史守山,张二鹏,李钗,娄建忠,刘保亭,闫小兵..溅射功率对射频磁控溅射制备非晶In-Ga-Zn-O薄膜的影响[J].人工晶体学报,2013,42(7):1343-1346,1352,5.基金项目
国家自然科学基金(60876055,11074063) （60876055,11074063）
河北省自然科学基金(E2012201088) （E2012201088）
河北省高等学校科学研究项目(ZH2012019) （ZH2012019）
河北大学自然科学基金(2011-219) （2011-219）
