人工晶体学报2013，Vol.42Issue(7)：1406-1409,4.
低温GaN插入层对AlGaN/GaN二维电子气特性的改善
Improvement of Low Tmperature GaN Interlayer on the Property of the Two-dimensional Electron Gas in AlGaN/GaN Heterostructure
张东国 1李忠辉 1彭大青 1董逊 1李亮 1倪金玉1
作者信息
- 1. 南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,南京210016
- 折叠
摘要
Abstract
The AlGaN/GaN two-dimensional electron gas material on sapphire substrate was grown by low-pressure MOCVD method,and the influence of the 2DEG transport property from the low-temperature CaN layer which was inserted in the GaN growth was investigated.Properties of the samples were studied by AFM and Hall measurement.The results indicated that the LT-GaN interlayer could improve the roughness of the surface,and obviously raise the electron mobility in the 2DEG.Hall measurement revealed that the mobility of 2110 cm2/V · s at room temperature could be achieved when the growth temperature of LT-GaN was 860 ℃.关键词
MOCVD/缓冲层/AlGaN/GaN/二维电子气Key words
MOCVD/ buffer layer/ AlGaN/GaN/ 2DEG分类
信息技术与安全科学引用本文复制引用
张东国,李忠辉,彭大青,董逊,李亮,倪金玉..低温GaN插入层对AlGaN/GaN二维电子气特性的改善[J].人工晶体学报,2013,42(7):1406-1409,4.
