原子与分子物理学报2013，Vol.30Issue(4)：659-664,6.DOI:10.3969/j.issn.1000-0364.2013.04.025
双面HIT太阳电池TCO与非晶硅界面势垒的模拟优化
Optimizing the interface barrier between TCO and amorphous silicon of bifacial HIT solar cell by simulation
摘要
Abstract
The effect of interface barrier between TCO and amorphous silicon on the photovoltaic characteristics of TCO/a-Si:H(p+)/a-Si:H(i)/c-Si(n) /a-Si:H(i) /a-Si:H(n+) /TCO heterojunction solar cell was simulated by AMPS-1D software developed by the Pennsylvania State University.The results indicate that with the higher interface barrier (for electron) of TCO/p+ front contact,Ohmic contact is easy to form and short wave response of solar cell is enhanced that make the performance of solar cell better.It is found that the lower interface barrier of n+/ TCO back contact,the performance of solar cell is better.If the back surface field is heavily doped,the conversion efficiency of solar cell is not affected by the barrier when the back contact barrier is less than or equal to O.5 eV.If the back surface field is low doped,it can achieve the same conversion efficiency with heavy doping when the back contact barrier is vary small.关键词
太阳电池/异质结/TCO/势垒Key words
solar cell/ heterojunction/TCO/barrier分类
能源科技引用本文复制引用
任瑞晨,张研研,史力斌,李彩霞..双面HIT太阳电池TCO与非晶硅界面势垒的模拟优化[J].原子与分子物理学报,2013,30(4):659-664,6.基金项目
辽宁省自然科学基金(201102004) （201102004）
