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Nano inhomogeneity effects on small Ag/n-Si Schottky diode parameters at high temperature

M.A.Yeganeh R.K.Mamedov A.J.Novinrooz

半导体学报(英文版)2013,Vol.34Issue(8):8-14,7.
半导体学报(英文版)2013,Vol.34Issue(8):8-14,7.DOI:10.1088/1674-4926/34/8/082002

Nano inhomogeneity effects on small Ag/n-Si Schottky diode parameters at high temperature

Nano inhomogeneity effects on small Ag/n-Si Schottky diode parameters at high temperature

M.A.Yeganeh 1R.K.Mamedov 2A.J.Novinrooz1

作者信息

  • 1. Islamic Azad University Bonab Branch, Faculty of Electronic Engineering, Iran
  • 2. Faculty of Physics, Baku State University, Academic Zahid Khalilov Str.23, AZ 1148, Baku
  • 折叠

摘要

关键词

Schottky contact/ nano patch/ high temperatures/ Schottky parameters/ AFM and SPM

Key words

Schottky contact/ nano patch/ high temperatures/ Schottky parameters/ AFM and SPM

引用本文复制引用

M.A.Yeganeh,R.K.Mamedov,A.J.Novinrooz..Nano inhomogeneity effects on small Ag/n-Si Schottky diode parameters at high temperature[J].半导体学报(英文版),2013,34(8):8-14,7.

半导体学报(英文版)

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1674-4926

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