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Averaged hole mobility model of biaxially strained Si

Song Jianjun Zhu He Yang Jinyong Zhang Heming Xuan Rongxi Hu Huiyong

半导体学报（英文版）2013，Vol.34Issue(8)：15-18,4.

半导体学报（英文版）2013，Vol.34Issue(8)：15-18,4.DOI:10.1088/1674-4926/34/8/082003

Averaged hole mobility model of biaxially strained Si

Song Jianjun ¹Zhu He ¹Yang Jinyong ²Zhang Heming ¹Xuan Rongxi ¹Hu Huiyong¹

作者信息

1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University,Xi'an 710071, China
2. Beijing Research Institute of Precise Mechatronic Controls, Beijing 100076, China
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摘要

关键词

strain/ model/ mobility

Key words

strain/ model/ mobility

引用本文复制引用

Song Jianjun,Zhu He,Yang Jinyong,Zhang Heming,Xuan Rongxi,Hu Huiyong..Averaged hole mobility model of biaxially strained Si[J].半导体学报（英文版）,2013,34(8):15-18,4.

基金项目

Project supported by the Research Fund for the Doctoral Program of Higher Education of China (No.JY0300122503) and NLAIC Research Fund (No.P140c090303110c0904). （No.JY0300122503）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

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