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The influence of RF power on the electrical properties of sputtered amorphous InGa-Zn-O thin films and devices

Shi Junfei Dong Chengyuan Dai Wenjun Wu Jie Chen Yuting Zhan Runze

半导体学报（英文版）2013，Vol.34Issue(8)：56-60,5.

半导体学报（英文版）2013，Vol.34Issue(8)：56-60,5.DOI:10.1088/1674-4926/34/8/084003

The influence of RF power on the electrical properties of sputtered amorphous InGa-Zn-O thin films and devices

Shi Junfei ¹Dong Chengyuan ¹Dai Wenjun ²Wu Jie ¹Chen Yuting ¹Zhan Runze¹

作者信息

1. Center for Opto-Electronic Materials and Devices, National Engineering Laboratory for TFT-LCD Materials and Technologies,Shanghai Jiao Tong University, Shanghai 200240, China
2. Infovision Optoelectronics(Kunshan)Co., Ltd, Kunshan 215300, China
折叠

摘要

关键词

thin-film transistors/ amorphous oxide semiconductors/ magnetron sputtering/ radio frequency power

Key words

thin-film transistors/ amorphous oxide semiconductors/ magnetron sputtering/ radio frequency power

引用本文复制引用

Shi Junfei,Dong Chengyuan,Dai Wenjun,Wu Jie,Chen Yuting,Zhan Runze..The influence of RF power on the electrical properties of sputtered amorphous InGa-Zn-O thin films and devices[J].半导体学报（英文版）,2013,34(8):56-60,5.

基金项目

Project supported by the State Key Development Program for Basic Research of China (No.2013CB328803) and the National Natural Science Foundation of China (No.61136004). （No.2013CB328803）

半导体学报（英文版）

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ISSN：1674-4926

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