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Stability analysis of a back-gate graphene transistor in air environment

Jia Kunpeng Yang Jie Su Yajuan Nie Pengfei Zhong Jian Liang Qingqing Zhu Huilong

半导体学报（英文版）2013，Vol.34Issue(8)：61-64,4.

半导体学报（英文版）2013，Vol.34Issue(8)：61-64,4.DOI:10.1088/1674-4926/34/8/084004

Stability analysis of a back-gate graphene transistor in air environment

Jia Kunpeng ¹Yang Jie ¹Su Yajuan ¹Nie Pengfei ¹Zhong Jian ¹Liang Qingqing ¹Zhu Huilong¹

作者信息

1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
折叠

摘要

关键词

graphene FET/ stability/ back-gate/ hysteresis

Key words

graphene FET/ stability/ back-gate/ hysteresis

引用本文复制引用

Jia Kunpeng,Yang Jie,Su Yajuan,Nie Pengfei,Zhong Jian,Liang Qingqing,Zhu Huilong..Stability analysis of a back-gate graphene transistor in air environment[J].半导体学报（英文版）,2013,34(8):61-64,4.

基金项目

Project supported by the National Sciences and Technology Major Project 02. （）

半导体学报（英文版）

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ISSN：1674-4926

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