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A 30-dB 1-16-GHz low noise IF amplifier in 90-nm CMOS

Cao Jia Li Zhiqun Li Qin Chen Liang Zhang Meng Wu Chenjian Wang Chong

半导体学报（英文版）2013，Vol.34Issue(8)：133-143,11.

半导体学报（英文版）2013，Vol.34Issue(8)：133-143,11.DOI:10.1088/1674-4926/34/8/085010

A 30-dB 1-16-GHz low noise IF amplifier in 90-nm CMOS

Cao Jia ¹Li Zhiqun ²Li Qin ¹Chen Liang ²Zhang Meng ¹Wu Chenjian ²Wang Chong¹

作者信息

1. Institute of RF & OE ICs, Southeast University, Nanjing 210096, China
2. Engineering Research Center of RF-ICs & RF-Systems, Ministry of Education, Nanjing 210096, China
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摘要

关键词

CMOS/ IF amplifier/ high gain, low noise amplifier/ wideband/ peaking technique/ cascading amplifier

Key words

CMOS/ IF amplifier/ high gain, low noise amplifier/ wideband/ peaking technique/ cascading amplifier

引用本文复制引用

Cao Jia,Li Zhiqun,Li Qin,Chen Liang,Zhang Meng,Wu Chenjian,Wang Chong..A 30-dB 1-16-GHz low noise IF amplifier in 90-nm CMOS[J].半导体学报（英文版）,2013,34(8):133-143,11.

基金项目

Project supported by the National Basic Research Program of China (No.2010CB327404) and the National Natural Science Foundation of China (No.60901012). （No.2010CB327404）

半导体学报（英文版）

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ISSN：1674-4926

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