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Planarization mechanism of alkaline copper CMP slurry based on chemical mechanical kinetics

Wang Shengli Yin Kangda Li Xiang Yue Hongwei Liu Yunling

半导体学报（英文版）2013，Vol.34Issue(8)：197-200,4.

半导体学报（英文版）2013，Vol.34Issue(8)：197-200,4.DOI:10.1088/1674-4926/34/8/086003

Planarization mechanism of alkaline copper CMP slurry based on chemical mechanical kinetics

Wang Shengli ¹Yin Kangda ¹Li Xiang ²Yue Hongwei ¹Liu Yunling¹

作者信息

1. Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China
2. No.46 Research Institute of China Electronics Technology Group Corporation, Tianjin 300220, China
折叠

摘要

关键词

chemical mechanical kinetics/ alkaline copper slurry/ planarization mechanism/ complexation/ reaction barrier

Key words

chemical mechanical kinetics/ alkaline copper slurry/ planarization mechanism/ complexation/ reaction barrier

引用本文复制引用

Wang Shengli,Yin Kangda,Li Xiang,Yue Hongwei,Liu Yunling..Planarization mechanism of alkaline copper CMP slurry based on chemical mechanical kinetics[J].半导体学报（英文版）,2013,34(8):197-200,4.

基金项目

Project supported by the Special Project Items No.2 in National Long-term Technology Development Plan,China (No.2009ZX02308). （No.2009ZX02308）

半导体学报（英文版）

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ISSN：1674-4926

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