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A novel oxidation-based wet etching method for AlGaN/GaN heterostructures

Cai Jinbao Wang Jinyan Liu Yang Xu Zhe Wang Maojun Yu Min Xie Bing

半导体学报（英文版）2013，Vol.34Issue(8)：201-204,4.

半导体学报（英文版）2013，Vol.34Issue(8)：201-204,4.DOI:10.1088/1674-4926/34/8/086004

A novel oxidation-based wet etching method for AlGaN/GaN heterostructures

Cai Jinbao ¹Wang Jinyan ¹Liu Yang ¹Xu Zhe ¹Wang Maojun ¹Yu Min ¹Xie Bing¹

作者信息

1. Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China
折叠

摘要

关键词

AlGaN/GaN/ wet etching/ thermal oxidation/ KOH solution

Key words

AlGaN/GaN/ wet etching/ thermal oxidation/ KOH solution

引用本文复制引用

Cai Jinbao,Wang Jinyan,Liu Yang,Xu Zhe,Wang Maojun,Yu Min,Xie Bing..A novel oxidation-based wet etching method for AlGaN/GaN heterostructures[J].半导体学报（英文版）,2013,34(8):201-204,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.60406004,60890193,60736033) and the National Key Micrometer/Nanometer Processing Laboratory,China. （Nos.60406004,60890193,60736033）

半导体学报（英文版）

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ISSN：1674-4926

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