材料科学与工程学报2013，Vol.31Issue(3)：473-478,6.
薄膜光伏材料铜铟镓硒的研究进展
Research Progress in Preparation, Structure and Properties of CIGS Film
摘要
Abstract
CuIn1-xGaxSe2 (CIGS) as a photovoltaic material is reviewed in this paper in terms of their microstructures,optical and electrical properties.Some key characteristics,such as band gap,conductivity type,absorption coefficient,grain boundary recombination rate,minority carrier lifetime and so on,are introduced.In addition,two preparation methods of CIGS based on magnetron sputtering are presented.One is selenization of stack element layer; the other is single-step sputtering.Electrodeposition,a non-vacuum preparation of CIGS,is compared with the magnetron sputtering methods.Finally,the existing problems that hinder the development of CIGS including sophisticated preparation,high cost and shortage of rare metal,are discussed.Finally,the latest development of CIGS and development trends at home and abroad are analyzed.关键词
铜铟镓硒/结构性质/磁控溅射/电化学沉积法Key words
CuIn1-xGaxSe2/ structure and property/ magnetron sputtering/ electrodeposition分类
化学化工引用本文复制引用
房文健,刘永生,杨晶晶,方津,彭麟,杨正龙..薄膜光伏材料铜铟镓硒的研究进展[J].材料科学与工程学报,2013,31(3):473-478,6.基金项目
上海市青年科技启明星计划(跟踪)资助项目(11QH1401000)、教育部科学技术研究重点资助项目(211055)、上海市科委重点资助项目(12JC1404400,11160500700)、上海市教育委员会科研创新资助项目(11ZZ168) （跟踪）
