发光学报2013，Vol.34Issue(8)：1051-1056,6.DOI:10.3788/fgxb20133408.1051
电流拥挤效应与LED器件可靠性分析
Study of Current Crowding Effect and Reliability of LED Devices
摘要
Abstract
The current crowding effect of low-power GaN base LEDs was investigated.It is found that LED module (eight LEDs in series as a set of group) suffered voltage surge sometimes presented current leakage failure.Pspice was applied to simulate LED module.It showed the damaged samples bore more voltage and power compared with the normal results.The orientation of leakage current of LED chip was studied via Emission Microscope (EMMI),the result indicated the leakage current intensively spreaded on the end of the p-type extended electrode.We assumed that the damaged route of voltage surged through the quantum well of LED,and the un-distribution current led to the effect of current crowding near the p-type extended electrode,which aggravated the injury severity of pn junction.Well-distributed current could improve the reliability of LED.Finally,the failure analysis of LED with differential negative resistance effect in the current-voltage characteristics was given.关键词
光学器件/电流拥挤/发光二极管/EMMI/可靠性Key words
optical device/ current crowding/ LED/ EMMI/ reliability分类
信息技术与安全科学引用本文复制引用
吴艳艳,冯士维,乔彦斌,魏光华,张建伟..电流拥挤效应与LED器件可靠性分析[J].发光学报,2013,34(8):1051-1056,6.基金项目
广东省战略性新兴产业专项资金LED产业项目(2012A080304003) （2012A080304003）
北京市自然科学基金(4130022)资助项目 （4130022）
