首页|期刊导航|高电压技术|Experimental Study of Surface Flashover Field of SI-GaAs Photoconductive Semiconductor Switch

Experimental Study of Surface Flashover Field of SI-GaAs Photoconductive Semiconductor Switch

JI Weili SHI Wei

高电压技术2013，Vol.39Issue(8)：1919-1924,6.

高电压技术2013，Vol.39Issue(8)：1919-1924,6.DOI:10.3969/j.issn.1003-6520.2013.08.016

Experimental Study of Surface Flashover Field of SI-GaAs Photoconductive Semiconductor Switch

JI Weili ¹SHI Wei¹

作者信息

1. Applied Physics Department, Xi'an University of Technology, Xi'an 710048, China
折叠

摘要

关键词

SI-GaAs/ photoconductive semiconductor switch/ surface flashover/ discharge/ dielectric coating/ electric field

Key words

SI-GaAs/ photoconductive semiconductor switch/ surface flashover/ discharge/ dielectric coating/ electric field

引用本文复制引用

JI Weili,SHI Wei..Experimental Study of Surface Flashover Field of SI-GaAs Photoconductive Semiconductor Switch[J].高电压技术,2013,39(8):1919-1924,6.

基金项目

Project supported by National Natural Science Foundation of China (50837005,51107099),Foundation of the State Key Laboratory of Electrical Insulation for Power Equipment (EIPE09203). （50837005,51107099）

高电压技术

OA北大核心CSCDCSTPCD

ISSN：1003-6520

访问量0

下载量0

段落导航