哈尔滨商业大学学报（自然科学版）2013，Vol.29Issue(4)：443-447,465,6.
一种高电源抑制比的CMOS带隙基准电压源
A high PSRR CMOS bandgap voltage reference
摘要
Abstract
A high power supply rejection ratio (PSRR) CMOS bandgap reference (BGR),which adopt a pre-regulator,is designed in this paper.To facilitate comparison,BGRs with-and without-pre-regulator are,respectively,design and simulate in the CSMC O.5 μm standard CMOS process technology.Simulation results show that PSRR of designed BGR with preregulator achieves,respectively,-117.3 dB,-106.2 dB and-66.2 dB at 100 Hz,1 kHz and 100 kHz,while PSRR of BGR without pre-regulator had only,respectively,-81.8 dB,-80.1 dB and-44.9 dB at 100 Hz,1 kHz and 100 kHz.The BGR with pre-regulator achieve the temperature coefficient of 6.39 ppm/℃ in temperature range from-15 ℃ to 90 ℃.When power supply voltage Vdd changes from 2.2 to 8V,output voltage deviation of the BGR with pre-regulator is only 9.73 μV.关键词
带隙基准/电源抑制比/前调整器Key words
bandgap reference / power supply rejection ratio / pre-regulator分类
信息技术与安全科学引用本文复制引用
周前能,段晓忠,李红娟..一种高电源抑制比的CMOS带隙基准电压源[J].哈尔滨商业大学学报（自然科学版）,2013,29(4):443-447,465,6.基金项目
重庆市自然科学基金项目(cstcjjA40011) （cstcjjA40011）
重庆市教委科学技术研究项目(KJ120503,KJ120533) （KJ120503,KJ120533）
重庆邮电大学博士启动基金项目(A2010-09). （A2010-09）
